D. Ielmini : rechercher sur Z-Library

Année:

2005

Langue:

english

Fichier:

PDF, 648 KB

english, 2005

Reliability issues and modeling of Flash and post-Flash memory (Invited Paper)

Daniele Ielmini

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 678 KB

english, 2009

Status and challenges of phase change memory modeling

A.L. Lacaita, D. Ielmini, D. Mantegazza

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 995 KB

english, 2008

Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories

F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, D.J. Wouters

Journal:

Microelectronics Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2011

Impact of gate stack process on conduction and reliability of 0.18 μm PMOSFET

G. Ghidini, A. Garavaglia, G. Giusto, A. Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, D. Ielmini

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 325 KB

english, 2003

A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories

D. Ielmini, A.S. Spinelli, A.L. Lacaita, A. Modelli

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 298 KB

english, 2001

Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics

D. Mantegazza, D. Ielmini, A. Pirovano, A.L. Lacaita, E. Varesi, F. Pellizzer, R. Bez

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 493 KB

english, 2008

Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories

Mattia Boniardi, Daniele Ielmini, Innocenzo Tortorelli, Andrea Redaelli, Agostino Pirovano, Mario Allegra, Michele Magistretti, Camillo Bresolin, Davide Erbetta, Alberto Modelli, Enrico Varesi, Fabio

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 872 KB

english, 2011

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

Ielmini, D.

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 823 KB

english, 2011

Electronic switching effect and phase-change transition in chalcogenide materials

Redaelli, A., Pirovano, A., Pellizzer, F., Lacaita, A.L., Ielmini, D., Bez, R.

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 100 KB

english, 2004

Phase I clinical and pharmacological evaluation of the multi-tyrosine kinase inhibitor SU006668 by chronic oral dosing

Cristiana Sessa, Lucia Viganò, Giacomo Grasselli, Josè Trigo, Irene Marimon, Anna Lladò, Alberta Locatelli, Nicoletta Ielmini, Silvia Marsoni, Luca Gianni

Journal:

European Journal of Cancer

Année:

2006

Langue:

english

Fichier:

PDF, 450 KB

english, 2006

Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

Ielmini, Daniele, Zhang, Yuegang

Journal:

Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 1.21 MB

english, 2007

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

Nardi, Federico, Balatti, Simone, Larentis, Stefano, Gilmer, David C., Ielmini, Daniele

Journal:

Cassinerio, M., Ciocchini, N., Ielmini, D.

Année:

2013

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2013

Logic Computation in Phase Change Materials by Threshold and Memory Switching

Journal:

Advanced Materials

Année:

2013

Langue:

english

Fichier:

PDF, 914 KB

english, 2013

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Filamentary-switching model in RRAM for time, energy and scaling projections

Ielmini, Daniele

Année:

2011

Langue:

english

Fichier:

PDF, 307 KB

english, 2011

[IEEE 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Melbourne VIC, Australia (2014.6.1-2014.6.5)] 2014 IEEE International Symposium on Circuits and Systems (ISCAS) - Statistical modeling of program and read variability in resistive switching devices

Ambrogio, S., Balatti, S., Cubeta, A., Ielmini, D.

Année:

2014

Langue:

english

Fichier:

PDF, 1014 KB

english, 2014

Recent Advances on the Modeling of Phase Change Materials and Devices

Lacaita, Andrea Leonardo, Russo, Ugo, Ielmini, Daniele

Journal:

MRS Proceedings

Année:

2008

Langue:

english

Fichier:

PDF, 766 KB

english, 2008

Voltage-Controlled Cycling Endurance of HfOₓ-Based Resistive-Switching Memory

Balatti, Simone, Ambrogio, Stefano, Wang, Zhongqiang, Sills, Scott, Calderoni, Alessandro, Ramaswamy, Nirmal, Ielmini, Daniele

Journal:

Ambrogio, Stefano, Balatti, Simone, Milo, Valerio, Carboni, Roberto, Wang, Zhong-Qiang, Calderoni, Alessandro, Ramaswamy, Nirmal, Ielmini, Daniele

Année:

2015

Langue:

english

Fichier:

PDF, 3.36 MB

english, 2015

Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM

Journal:

Ielmini, Daniele, Waser, Rainer

Année:

2016

Langue:

english

Fichier:

PDF, 3.85 MB

english, 2016

Resistive Switching (From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications) || Electroforming Processes in Metal Oxide Resistive-Switching Cells

Année:

2016

Langue:

english

Fichier:

PDF, 1.42 MB

english, 2016

[IEEE ESSDERC 2016 - 46th European Solid-State Device Research Conference - Lausanne, Switzerland (2016.9.12-2016.9.15)] 2016 46th European Solid-State Device Research Conference (ESSDERC) - Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliability

Ciocchini, N., Laudato, M., Lacaita, A. L., Ielmini, D., Boniardi, M., Varesi, E., Fantini, P.

Année:

2016

Langue:

english

Fichier:

PDF, 1.34 MB

english, 2016

[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Brain-inspired recurrent neural network with plastic RRAM synapses

Milo, Valerio, Chicca, Elisabetta, Ielmini, Daniele

Année:

2018

Langue:

english

Fichier:

PDF, 1.95 MB

english, 2018

In-memory computing with resistive switching devices

Ielmini, Daniele, Wong, H.-S. Philip

Journal:

Nature Electronics

Année:

2018

Langue:

english

Fichier:

PDF, 2.44 MB

english, 2018

[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks

Milo, V., Pedretti, G., Laudato, M., Bricalli, A., Ambrosi, E., Bianchi, S., Chicca, E., Ielmini, D.

Année:

2018

Langue:

english

Fichier:

PDF, 2.04 MB

english, 2018

Recommended Methods to Study Resistive Switching Devices

Lanza, Mario, Wong, H.-S. Philip, Pop, Eric, Ielmini, Daniele, Strukov, Dimitri, Regan, Brian C., Larcher, Luca, Villena, Marco A., Yang, J. Joshua, Goux, Ludovic, Belmonte, Attilio, Yang, Yuchao, Pug

Journal:

Advanced Electronic Materials

Année:

2018

Langue:

english

Fichier:

PDF, 5.05 MB

english, 2018

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices

Wang, Wei, Wang, Ming, Ambrosi, Elia, Bricalli, Alessandro, Laudato, Mario, Sun, Zhong, Chen, Xiaodong, Ielmini, Daniele

Journal:

Nature Communications

Année:

2019

Langue:

english

Fichier:

PDF, 1.76 MB

english, 2019

Phase-change memories (PCM) – Experiments and modelling: general discussion

Bartlett, Philip, Berg, Alexandra I., Bernasconi, Marco, Brown, Simon, Burr, Geoffrey, Foroutan-Nejad, Cina, Gale, Ella, Huang, Ruomeng, Ielmini, Daniele, Kissling, Gabriela, Kolosov, Vladimir, Kozick

Journal:

Faraday Discussions

Année:

2019

Langue:

english

Fichier:

PDF, 2.53 MB

english, 2019

Unsupervised learning to overcome catastrophic forgetting in neural networks

Munoz-Martin, Irene, Bianchi, Stefano, Pedretti, Giacomo, Melnic, Octavian, Ambrogio, Stefano, Ielmini, Daniele

Journal:

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Année:

2019

Langue:

english

Fichier:

PDF, 8 KB

english, 2019

The 6-D Model of National Culture as a Tool to Examine Cultural Interpretation of Migration Trauma-Related Dissociative Disorder: A Case Series

Callegari, C., Ielmini, M., Caselli, I., Mattia, M., Gasparini, A., Grossi, A., Ceccon, F., Poloni, N.

Journal:

Journal of Immigrant and Minority Health

Année:

2019

Langue:

english

Fichier:

PDF, 617 KB

english, 2019

Stochastic Memory Devices for Security and Computing

Carboni, Roberto, Ielmini, Daniele

Journal:

Advanced Electronic Materials

Année:

2019

Langue:

english

Fichier:

PDF, 6.51 MB

english, 2019

Resilience and recovery style: a retrospective study on associations among personal resources, symptoms, neurocognition, quality of life and psychosocial functioning in psychotic patients

Zizolfi, Daniele, Poloni, Nicola, Caselli, Ivano, Ielmini, Marta, Lucca, Giulia, Diurni, Marcello, Cavallini, Greta, Callegari, Camilla

Journal:

Psychology Research and Behavior Management

Année:

2019

Langue:

english

Fichier:

PDF, 316 KB

english, 2019

BrainâInspired Structural Plasticity through Reweighting and Rewiring in MultiâTerminal SelfâOrganizing Memristive Nanowire Networks

Milano, Gianluca, Pedretti, Giacomo, Fretto, Matteo, Boarino, Luca, Benfenati, Fabio, Ielmini, Daniele, Valov, Ilia, Ricciardi, Carlo

Journal:

Advanced Intelligent Systems

Année:

2020

Fichier:

PDF, 16.22 MB

2020

[IEEE 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - Sevilla (2020.10.12-2020.10.14)] 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - Hardware Implementation of PCM-Based Neurons with Self-Regulating Threshold for Homeostatic Scaling in Unsupervised Learning

Munoz-Martin, I., Bianchi, S., Hashemkhani, S., Pedretti, G., Ielmini, D.

Année:

2020

Fichier:

PDF, 1.46 MB

2020

[IEEE 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - Sevilla (2020.10.12-2020.10.14)] 2020 IEEE International Symposium on Circuits and Systems (ISCAS) - A Spiking Recurrent Neural Network with Phase Change Memory Synapses for Decision Making

Pedretti, G., Milo, V., Hashemkhani, S., Mannocci, P., Melnic, O., Chicca, E., Ielmini, D.

Année:

2020

Fichier:

PDF, 1.03 MB

2020

ChemInform Abstract: Highly Efficient Palladium-Catalyzed Boronic Acid Coupling Reactions in Water: Scope and Limitations.

D. BADONE, M. BARONI, R. CARDAMONE, A. IELMINI, U. GUZZI

Journal:

ChemInform

Année:

1998

Fichier:

PDF, 35 KB

1998

Extracting kinetic parameters for homogeneous [Os(bpy)2ClPyCOOH]+ mediated enzyme reactions from cyclic voltammetry and simulations

V. Flexer, M.V. Ielmini, E.J. Calvo, P.N. Bartlett

Journal:

Bioelectrochemistry

Année:

2008

Langue:

english

Fichier:

PDF, 911 KB

english, 2008

Edge and percolation effects on VT window in nanocrystal memories

R. Gusmeroli, A.S. Spinelli, C. Monzio Compagnoni, D. Ielmini, A.L. Lacaita

Journal:

Christian Monzio Compagnoni, Daniele Ielmini, Alessandro S. Spinelli, Andrea L. Lacaita

Année:

2005

Langue:

english

Fichier:

PDF, 257 KB

english, 2005

Extraction of the floating-gate capacitive couplings for drain turn-on estimation in discrete-trap memories

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 169 KB

english, 2006

Unified mechanisms for structural relaxation and crystallization in phase-change memory devices

D. Ielmini, M. Boniardi, A.L. Lacaita, A. Redaelli, A. Pirovano

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 394 KB

english, 2009

Filament diffusion model for simulating reset and retention processes in RRAM

S. Larentis, C. Cagli, F. Nardi, D. Ielmini

Journal:

Christian Monzio Compagnoni, Daniele Ielmini, Alessandro S Spinelli, Andrea L Lacaita, Cosimo Gerardi

Année:

2011

Langue:

english

Fichier:

PDF, 817 KB

english, 2011

Study of nanocrystal memory reliability by CAST structures

Journal: